• DocumentCode
    1103413
  • Title

    VA-8 Fabrication, characterization, and modeling of inverted mode InGaAs/InP heterojunction bipolar transistors

  • Author

    Vlcek, Jaroslav ; Whitney, P. ; Fonstad, C.G.

  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2547
  • Lastpage
    2547
  • Keywords
    Bipolar transistors; Current density; Fabrication; Geometry; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Materials science and technology; Schottky diodes; Thermionic emission;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22361
  • Filename
    1485107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103413