Title :
VA-8 Fabrication, characterization, and modeling of inverted mode InGaAs/InP heterojunction bipolar transistors
Author :
Vlcek, Jaroslav ; Whitney, P. ; Fonstad, C.G.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Bipolar transistors; Current density; Fabrication; Geometry; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Materials science and technology; Schottky diodes; Thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22361
