Title :
VB-3 polycrystalline silicon devices for large-area NMOS and CMOS logic applications
fDate :
11/1/1985 12:00:00 AM
Keywords :
Aluminum; Annealing; CMOS logic circuits; Fabrication; Hydrogen; Logic devices; MOS devices; Plasma temperature; Silicon devices; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22362
