Title :
VB-4 Comparison of different techniques for passivation of small-grain poly-Si MOSFET´s
Author :
Rodder, M. ; Madan, S.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Dielectric substrates; Encapsulation; Hydrogen; Passivation; Plasma devices; Plasma sources; Plasma temperature; Random access memory; Rapid thermal annealing; Three-dimensional integrated circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22363
