Title :
VB-2 a three-dimensional merged vertical bipolar-MOS device in recrystallized silicon
Author :
Sturm, James C. ; Gibbons, J.F.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Aluminum; Bipolar transistors; CMOS logic circuits; Fabrication; Logic devices; MOS devices; Semiconductor films; Silicon; Surface emitting lasers; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22364
