Title :
VB-5 floating substrate effects on the switching characteristics of SOI MOSFET
Author :
Kato, Kazuhiko ; Taniguchi, Kazuhiro
fDate :
11/1/1985 12:00:00 AM
Keywords :
Bipolar transistors; Charge carrier processes; Electric variables; Electron devices; Leakage current; MOS devices; MOSFET circuits; Three-dimensional integrated circuits; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22365
