Title :
Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide
Author :
Sugiura, S. ; Kishimoto, S. ; Mizutani, T. ; Kuroda, M. ; Ueda, T. ; Tanaka, T.
Author_Institution :
Nagoya Univ., Nagoya
Abstract :
Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick SiO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.
Keywords :
MOSFET; HfO2; SiO2; enhancement-mode n-channel MOSFET; gate insulator; gate oxide; metal-oxide-semiconductor field effect transistor; overlap gate structure; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071814
