Title :
VB-6 Enhanced leakage current due to a high-gain stray bipolar transistor in accumulation-mode SOI MOSFET´s
fDate :
11/1/1985 12:00:00 AM
Keywords :
Bipolar transistors; CMOS technology; Charge carrier processes; Circuits; Electrons; Leakage current; MOSFETs; Physics; Radiative recombination; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22366
