In-situ crystallization of YBaCuO films by the RF-diode sputtering method

Author

Kajikawa, H. ; Fukumoto, Y. ; Hayashi, S. ; Shibutani, K. ; Ogawa, R. ; Kawate, Y.

Author_Institution

Kobe Steel Ltd., Japan

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

1422

Lastpage

1425

Abstract

A recently developed temple-bell-type substrate holder in the conventional RF-diode sputtering method was used to obtain high-quality YBa₂Cu₃O_7-y films. Avoiding the rush of negative ions into the films by placing the substrate perpendicular to the target surface led to the formation of highly oriented films with smooth surfaces on the various kinds of oxide substrates. The as-grown films deposited on SrTiO₃ (100), SrTiO₃ (110), and MgO (100) substrates showed a transition temperature of >80 K. The critical current densities were improved by post-oxygen annealing and reached values of more than 2×10⁵ A/cm² at 77 K in the films on the MgO (100) and SrTiO₃ (100) substrates. However, AC susceptibility measurement showed that many weak links, presumably due to oxygen deficiencies, remained

Keywords

barium compounds; critical current density (superconductivity); crystallisation; high-temperature superconductors; sputtered coatings; superconducting junction devices; superconducting thin films; superconducting transition temperature; yttrium compounds; 77 K; AC susceptibility measurement; MgO; RF-diode sputtering method; SrTiO₃; YBaCuO; as-grown films; critical current densities; high temperature superconductors; in-situ crystallisation; post-O annealing; superconductors thin films; temple-bell-type substrate holder; transition temperature; weak links; Argon; Cathodes; Crystallization; Semiconductor films; Sputtering; Substrates; Superconducting films; Superconducting transition temperature; Surface morphology; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133451

Filename

133451