Title :
In-situ crystallization of YBaCuO films by the RF-diode sputtering method
Author :
Kajikawa, H. ; Fukumoto, Y. ; Hayashi, S. ; Shibutani, K. ; Ogawa, R. ; Kawate, Y.
Author_Institution :
Kobe Steel Ltd., Japan
fDate :
3/1/1991 12:00:00 AM
Abstract :
A recently developed temple-bell-type substrate holder in the conventional RF-diode sputtering method was used to obtain high-quality YBa2Cu3O7-y films. Avoiding the rush of negative ions into the films by placing the substrate perpendicular to the target surface led to the formation of highly oriented films with smooth surfaces on the various kinds of oxide substrates. The as-grown films deposited on SrTiO3 (100), SrTiO3 (110), and MgO (100) substrates showed a transition temperature of >80 K. The critical current densities were improved by post-oxygen annealing and reached values of more than 2×105 A/cm2 at 77 K in the films on the MgO (100) and SrTiO3 (100) substrates. However, AC susceptibility measurement showed that many weak links, presumably due to oxygen deficiencies, remained
Keywords :
barium compounds; critical current density (superconductivity); crystallisation; high-temperature superconductors; sputtered coatings; superconducting junction devices; superconducting thin films; superconducting transition temperature; yttrium compounds; 77 K; AC susceptibility measurement; MgO; RF-diode sputtering method; SrTiO3; YBaCuO; as-grown films; critical current densities; high temperature superconductors; in-situ crystallisation; post-O annealing; superconductors thin films; temple-bell-type substrate holder; transition temperature; weak links; Argon; Cathodes; Crystallization; Semiconductor films; Sputtering; Substrates; Superconducting films; Superconducting transition temperature; Surface morphology; Yttrium barium copper oxide;
Journal_Title :
Magnetics, IEEE Transactions on