DocumentCode :
1103520
Title :
VIA-2 Characterization of TEGFET´s and MESFET´s using the electrooptic sampling technique
Author :
Meyer, K.E. ; Dykaar, D.R. ; Mourou, G.A.
Volume :
32
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
2551
Lastpage :
2551
Keywords :
Gallium arsenide; HEMTs; Laboratories; MESFETs; MOCVD; MODFETs; Optical pulses; Ring oscillators; Sampling methods; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22370
Filename :
1485116
Link To Document :
بازگشت