• DocumentCode
    1103527
  • Title

    VIA-3 GaAs MESFET´s and ring oscillators on MOCVD grown GaAs/Si

  • Author

    Nonaka, Tomomi ; Akiyama, Masanori ; Kawarada, Y. ; Kaminishi, K.

  • Volume
    32
  • Issue
    11
  • fYear
    1985
  • fDate
    11/1/1985 12:00:00 AM
  • Firstpage
    2551
  • Lastpage
    2552
  • Keywords
    Electron devices; Fabrication; Gallium arsenide; MESFETs; MOCVD; Microwave oscillators; Research and development; Ring oscillators; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22371
  • Filename
    1485117