The effect of body resistance on the breakdown characteristics of SOI MOSFET´s

The drain-source breakdown of (nonfully depleted) SOI MOSFET´s is analyzed with attention paid to the body (to source) resistance, R_B . Simple but physical characterizations of the holding voltage and the snapback voltage in terms of device parameters are derived. The physical insight afforded reveals that the snapback characteristic is an inherent effect of finite R_B. The holding voltage increases with decreasing R_B, but for submicron devices the increase is not significant unless R_B is decreased well below values achieved with typical intrinsic body-to-source ties having acceptable (limited) widths