Selective epitaxial growth of YBaCuO thin films and its application to MOSFET fabrication

The feasibility of selective (001)-Y₁Ba₂Cu ₃O_y epitaxy is examined. The selective growth of epitaxial Y₁Ba₂Cu₃O_y and heteroepitaxial (100)-MgO/(001)-Y₁Ba₂Cu₃O_y layers through the SiO window was obtained. For defining the epitaxial growth region, the partial coating of the MgO substrate with the reactive SiO was used. The Y₁Ba₂Cu₃O _y deposited through the SiO window grew epitaxially; the film formed directly on the SiO layer was semitransparent, electrically insulating, and amorphous. MOS capacitors and MOSFETs were fabricated in the same way