• DocumentCode
    1103542
  • Title

    Electron transport properties of Ga0.51In0.49P for device applications

  • Author

    Besikci, Cengiz ; Razeghi, M.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
  • Volume
    41
  • Issue
    6
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    1066
  • Lastpage
    1069
  • Abstract
    We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.49P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-xAs(x=0.2, 0.3). Our Monte Carlo data show that transport properties of G0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace Al xGa1-xAs(x⩾0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures
  • Keywords
    Hall effect; III-V semiconductors; Monte Carlo methods; carrier mobility; field effect transistors; gallium compounds; heterojunction bipolar transistors; hot carriers; impurity scattering; indium compounds; GaInP; HBTs; HFETs; Hall mobilities; MOCVD grown samples; Monte Carlo calculations; alloy scattering; device applications; electron drift; heterojunction devices; impurity concentration; lightly doped material; low-field mobility; mobility degrading mechanism; scattering mechanisms; steady-state electron transport; transient electron transport; Chemical vapor deposition; Electron mobility; Gallium arsenide; Hall effect; Impurities; Light scattering; Monte Carlo methods; Organic chemicals; Steady-state; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.293323
  • Filename
    293323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103542