Title :
Electron transport properties of Ga0.51In0.49P for device applications
Author :
Besikci, Cengiz ; Razeghi, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
We present Monte Carlo calculations of steady-state and transient electron transport properties of Ga0.51In0.49P. We have made a simulation-based comparison between Ga0.51In0.49P and AlxGa1-xAs(x=0.2, 0.3). Our Monte Carlo data show that transport properties of G0.51In0.49P are favorable, and when the other advantages of the GaInP/GaAs system are also taken into account, this material is a good choice to replace Al xGa1-xAs(x⩾0.3). We have also calculated electron drift and Hall mobilities in Ga0.51In0.49P as a function of impurity concentration and temperature, and determined the effects of different scattering mechanisms on the low-field mobility. Calculated results are in good agreement with the measurements on metal organic chemical vapor deposition (MOCVD) grown samples with Hall mobilities within a factor of 0.5 of the calculated theoretical limit. It has also been found that alloy scattering is an important mobility degrading mechanism in lightly doped material at low temperatures
Keywords :
Hall effect; III-V semiconductors; Monte Carlo methods; carrier mobility; field effect transistors; gallium compounds; heterojunction bipolar transistors; hot carriers; impurity scattering; indium compounds; GaInP; HBTs; HFETs; Hall mobilities; MOCVD grown samples; Monte Carlo calculations; alloy scattering; device applications; electron drift; heterojunction devices; impurity concentration; lightly doped material; low-field mobility; mobility degrading mechanism; scattering mechanisms; steady-state electron transport; transient electron transport; Chemical vapor deposition; Electron mobility; Gallium arsenide; Hall effect; Impurities; Light scattering; Monte Carlo methods; Organic chemicals; Steady-state; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
