Title :
VIA-6 Comparison of side-gating behavior between InP MISFET´s and GaAs MESFET´s
Author :
Hasegawa, Hiroshi ; Kitagawa, Tomotaka ; Masuda, Hiroji ; Ohno, Hideo
fDate :
11/1/1985 12:00:00 AM
Keywords :
Avalanche breakdown; Electrodes; FETs; Filling; Gallium arsenide; Indium phosphide; Large scale integration; Leakage current; MESFETs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22373
