DocumentCode

1103548

Title

VIA-6 Comparison of side-gating behavior between InP MISFET´s and GaAs MESFET´s

Author

Hasegawa, Hiroshi ; Kitagawa, Tomotaka ; Masuda, Hiroji ; Ohno, Hideo

Volume

32

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

2552

Lastpage

2553

Keywords

Avalanche breakdown; Electrodes; FETs; Filling; Gallium arsenide; Indium phosphide; Large scale integration; Leakage current; MESFETs; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1985.22373

Filename

1485119