DocumentCode :
1103567
Title :
Intensity fluctuation in semiconductor lasers coupled to external cavity
Author :
Sato, Hisanao ; Fujita, Toshihiro ; Fujito, Katsuyuki
Author_Institution :
Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka, Japan
Volume :
21
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
46
Lastpage :
51
Abstract :
Broad peaks are observed in the intensity noise spectrum for external cavity AlGaAs lasers. Oscillating longitudinal mode spectrum measured with a high resolution Fabry-Perot interferometer indicates that the intensity noise peaks result from the lasing of several closely spaced external cavity modes. A new mechanism is proposed to explain the observed noise spectrum; the intensity fluctuation is induced by modulation of the dielectric constant in the semiconductor cavity due to the beating of the electric fields for lasing modes. Qualitative agreements between the theory and experiments are obtained.
Keywords :
Laser noise; Laser resonators; Semiconductor lasers; Dielectric measurements; Fabry-Perot interferometers; Fluctuations; Intensity modulation; Laser modes; Laser noise; Noise measurement; Optical coupling; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072526
Filename :
1072526
Link To Document :
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