• DocumentCode
    1103567
  • Title

    Intensity fluctuation in semiconductor lasers coupled to external cavity

  • Author

    Sato, Hisanao ; Fujita, Toshihiro ; Fujito, Katsuyuki

  • Author_Institution
    Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka, Japan
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • fDate
    1/1/1985 12:00:00 AM
  • Firstpage
    46
  • Lastpage
    51
  • Abstract
    Broad peaks are observed in the intensity noise spectrum for external cavity AlGaAs lasers. Oscillating longitudinal mode spectrum measured with a high resolution Fabry-Perot interferometer indicates that the intensity noise peaks result from the lasing of several closely spaced external cavity modes. A new mechanism is proposed to explain the observed noise spectrum; the intensity fluctuation is induced by modulation of the dielectric constant in the semiconductor cavity due to the beating of the electric fields for lasing modes. Qualitative agreements between the theory and experiments are obtained.
  • Keywords
    Laser noise; Laser resonators; Semiconductor lasers; Dielectric measurements; Fabry-Perot interferometers; Fluctuations; Intensity modulation; Laser modes; Laser noise; Noise measurement; Optical coupling; Semiconductor device noise; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1985.1072526
  • Filename
    1072526