DocumentCode
1103567
Title
Intensity fluctuation in semiconductor lasers coupled to external cavity
Author
Sato, Hisanao ; Fujita, Toshihiro ; Fujito, Katsuyuki
Author_Institution
Matsushita Electric Industrial Company, Ltd., Moriguchi, Osaka, Japan
Volume
21
Issue
1
fYear
1985
fDate
1/1/1985 12:00:00 AM
Firstpage
46
Lastpage
51
Abstract
Broad peaks are observed in the intensity noise spectrum for external cavity AlGaAs lasers. Oscillating longitudinal mode spectrum measured with a high resolution Fabry-Perot interferometer indicates that the intensity noise peaks result from the lasing of several closely spaced external cavity modes. A new mechanism is proposed to explain the observed noise spectrum; the intensity fluctuation is induced by modulation of the dielectric constant in the semiconductor cavity due to the beating of the electric fields for lasing modes. Qualitative agreements between the theory and experiments are obtained.
Keywords
Laser noise; Laser resonators; Semiconductor lasers; Dielectric measurements; Fabry-Perot interferometers; Fluctuations; Intensity modulation; Laser modes; Laser noise; Noise measurement; Optical coupling; Semiconductor device noise; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072526
Filename
1072526
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