Effect of Polarization Field and Nonradiative Recombination Lifetime on the Performance Improvement of Step Stage InGaN/GaN Multiple Quantum Well LEDs

Author

Huan Zheng ; Huiqing Sun ; Min Yang ; Jinxin Cai ; Xuna Li ; Hao Sun ; Cheng Zhang ; Xuancong Fan ; Zhuding Zhang ; Zhiyou Guo

Author_Institution

Lab. of Nanophotonic Functional Mater. & Device, South China Normal Univ., Guangzhou, China

Volume

11

Issue

9

fYear

2015

fDate

Sept. 2015

Firstpage

776

Lastpage

782

Abstract

InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with the step stage MQW structure have been investigated numerically. LEDs exhibit enhanced light output power and reduced turn-on voltage with the step stage MQW. Simulated results show that the improvement is mainly due to the modified band bending which is related to the polarization effect. Although the good crystalline quality can reduce the nonradiative recombination, it seems that the impact is small and non-dominant in the performance improvement.

Keywords

III-V semiconductors; LED displays; bending; gallium compounds; indium compounds; light polarisation; quantum well devices; wide band gap semiconductors; InGaN-GaN; crystalline quality; light emitting diode; modified band bending; multiple quantum well LED; nonradiative recombination lifetime effect; polarization field effect; step stage MQW; Electric fields; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination; GaN; light emitting diode (LED); nonradiative recombination; polarization effect;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2445974

Filename

7131443