Title :
Effect of Polarization Field and Nonradiative Recombination Lifetime on the Performance Improvement of Step Stage InGaN/GaN Multiple Quantum Well LEDs
Author :
Huan Zheng ; Huiqing Sun ; Min Yang ; Jinxin Cai ; Xuna Li ; Hao Sun ; Cheng Zhang ; Xuancong Fan ; Zhuding Zhang ; Zhiyou Guo
Author_Institution :
Lab. of Nanophotonic Functional Mater. & Device, South China Normal Univ., Guangzhou, China
Abstract :
InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with the step stage MQW structure have been investigated numerically. LEDs exhibit enhanced light output power and reduced turn-on voltage with the step stage MQW. Simulated results show that the improvement is mainly due to the modified band bending which is related to the polarization effect. Although the good crystalline quality can reduce the nonradiative recombination, it seems that the impact is small and non-dominant in the performance improvement.
Keywords :
III-V semiconductors; LED displays; bending; gallium compounds; indium compounds; light polarisation; quantum well devices; wide band gap semiconductors; InGaN-GaN; crystalline quality; light emitting diode; modified band bending; multiple quantum well LED; nonradiative recombination lifetime effect; polarization field effect; step stage MQW; Electric fields; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination; GaN; light emitting diode (LED); nonradiative recombination; polarization effect;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2015.2445974
