Title :
VIB-3 high-performance Si permeable-base transistors
Author :
Rathman, D.D. ; Mountain, R.W.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Doping; Electron devices; Fabrication; Frequency; Implants; Insulation; Ion implantation; Laboratories; Metallization; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22378
