Title :
VIB-6 measurement of minority-carrier transport parameters in heavily doped n-type silicon
Author :
Swanson, Richard M.
fDate :
11/1/1985 12:00:00 AM
Keywords :
Bipolar transistors; Current measurement; Doping; Laboratories; Length measurement; Photonic band gap; Semiconductor process modeling; Silicon; Solid state circuits; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22380
