DocumentCode
1103704
Title
High light output-power single-longitudinal-mode semiconductor laser diodes
Author
Kobayashi, Kohroh ; Mito, Ikuo
Author_Institution
NEC Corporation, Kawasaki, Japan
Volume
32
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
2594
Lastpage
2602
Abstract
Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD´s have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-longitudinal-mode CW light output power as high as 103 mW has been obtained in a 1.3-µm DFB-DC-PBH LD with facet reflectivities of 2 and 80-90 percent. Low internal quantum efficiency is pointed out to bean important problem for 1.5-µLD´s.
Keywords
Diode lasers; Distributed feedback devices; Fabry-Perot; Fiber lasers; Optical feedback; Optical fibers; Optical reflection; Power generation; Reflectivity; Repeaters;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22389
Filename
1485135
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