DocumentCode :
1103728
Title :
HBT Modeling
Author :
McMacken, John ; Nedeljkovic, Sonja ; Gering, Joe ; Halchin, Dave
Author_Institution :
RFMD, Greensboro
Volume :
9
Issue :
2
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
48
Lastpage :
71
Abstract :
III-V heterojunction bipolar transistors (HBTs) enjoy several advantages over their conventional silicon cousins. These include: (1) a thinner base and lower base resistance which yields higher gain and fmax; (2) high breakdown voltage; (3) low parasitics; (4) high power density. The combination of a thin base (higher fT), low base resistance (higher fmax), and low parasitics in particular make HBTs a suitable choice for high- frequency applications.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; HBT modeling; III-V heterojunction bipolar transistors; breakdown voltage; high power density; low base resistance; low parasitics; Charge carrier processes; FETs; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Molecular beam epitaxial growth; PHEMTs; Photonic band gap; Silicon; Substrates;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/MMM.2008.915366
Filename :
4472318
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1103728
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