• DocumentCode
    1103749
  • Title

    Theory and application of charge pumping for the characterization of Si-SiO2 interface and near-interface oxide traps

  • Author

    Paulsen, Ronald E. ; White, Marvin H.

  • Author_Institution
    Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
  • Volume
    41
  • Issue
    7
  • fYear
    1994
  • fDate
    7/1/1994 12:00:00 AM
  • Firstpage
    1213
  • Lastpage
    1216
  • Abstract
    A generalized charge pumping model has been developed which extends the use of charge pumping from a study of traps at the Si-SiO 2 interface to a study of traps in the oxide. The analytical model, based on tunneling theory, allows the spatial distribution of near-interface oxide traps to be determined from variable frequency charge pumping data. Profiling of near-interface oxide traps in irradiated MOSFET´s as well as SONOS nonvolatile memory devices is presented
  • Keywords
    electron traps; hole traps; insulated gate field effect transistors; radiation effects; semiconductor device models; semiconductor storage; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; SONOS nonvolatile memory devices; Si-SiO2; Si-SiO2 interface characterisation; analytical model; charge pumping model; irradiated MOSFET; near-interface oxide traps; tunneling theory; Charge carrier processes; Charge pumps; Electron emission; Electron traps; Frequency; Nonvolatile memory; Pulse measurements; Region 1; SONOS devices; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.293349
  • Filename
    293349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1103749