Title :
Ultrabroadband and compact power dividers/combiners on gallium arsenide substrate [Application Notes]
Author_Institution :
Tyco Electron., Roanoke
fDate :
4/1/2008 12:00:00 AM
Abstract :
Multilayer and multiconductor technologies such as Si- and gallium arsenide (GaAs)- based MMICs and LTCCs have resulted in compact components. In such technologies, lumped elements can be realized easily and have become attractive in reducing the size of passive components. A compensation technique to realize compact multioctave bandwidth two-way power splitters is presented in this article.
Keywords :
III-V semiconductors; gallium arsenide; power combiners; power dividers; ultra wideband technology; GaAs; compact multioctave bandwidth two-way power splitter; compact power divider; compensation technique; power combiners; ultrabroadband power divider; Bandwidth; Gallium arsenide; Impedance; MMICs; Metamaterials; Micromachining; Microwave circuits; Monolithic integrated circuits; Power dividers; Resistors;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2008.915337
