DocumentCode :
1103767
Title :
Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode
Author :
Sasaki, Akio ; Yano, Hiroshi ; Fujita, Shigeo ; Takeda, Yoshikazu
Author_Institution :
Kyoto University, Kyoto, Japan
Volume :
32
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
2656
Lastpage :
2661
Abstract :
New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-µm wavelength region.
Keywords :
Absorption; Heterojunctions; Indium phosphide; Light emitting diodes; Optical bistability; Optical buffering; Optical device fabrication; Optical devices; Phototransistors; Stimulated emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22396
Filename :
1485142
Link To Document :
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