DocumentCode
1103767
Title
Integrated optical devices of InGaAsP/InP heterojunction phototransistor and inner stripe light-emitting diode
Author
Sasaki, Akio ; Yano, Hiroshi ; Fujita, Shigeo ; Takeda, Yoshikazu
Author_Institution
Kyoto University, Kyoto, Japan
Volume
32
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
2656
Lastpage
2661
Abstract
New integrated optical devices combining an InGaAsP/InP HPT and an inner-stripe LED are proposed and their fabrication processes are described. The device functions of light amplification, optical bistability, and optical switching are demonstrated in the 1-µm wavelength region.
Keywords
Absorption; Heterojunctions; Indium phosphide; Light emitting diodes; Optical bistability; Optical buffering; Optical device fabrication; Optical devices; Phototransistors; Stimulated emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22396
Filename
1485142
Link To Document