Title :
The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systems
Author :
Gradinaru, G. ; Madangarli, V.P. ; Sudarshan, T.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
fDate :
7/1/1994 12:00:00 AM
Abstract :
New experimental results on surface flashover are reported for high field silicon-dielectric systems. Different conditions of the lateral surface, contacts and ambient dielectrics have been studied. The strong influence of the semiconductor quality, and that of the dielectric properties, on the prebreakdown and breakdown response of the system, is demonstrated. All experimental results strongly support the conclusion that surface flashover in silicon systems is a physical process totally different from semiconductor surface breakdown. This conclusion has important practical application in the improvement of the performance of photoconductive power switches, severely limited by premature breakdown effects
Keywords :
electric breakdown of solids; flashover; photoconducting devices; pulsed power technology; semiconductor switches; semiconductor-insulator boundaries; silicon; surface discharges; ambient dielectrics; breakdown response; dielectric properties; lateral surface; photoconductive power switches; prebreakdown response; pulsed power electronics; semiconductor properties; semiconductor quality; silicon-dielectric systems; surface flashover; Breakdown voltage; Dielectric breakdown; Electric breakdown; Flashover; Gallium arsenide; Semiconductor device breakdown; Semiconductor lasers; Semiconductor materials; Silicon; Surface discharges;
Journal_Title :
Electron Devices, IEEE Transactions on
