Hole mobility measurements in heavily doped Si1-xGex strained layers

Both Hall and drift in-plane mobilities have been measured in compressively strained p-type Si_1-xGe_x layers grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Measurements were taken over the boron doping range of 10¹⁸ cm^-3 to 10²⁰ cm^-3 with Ge contents of 0⩽x⩽0.22. The apparent drift mobility is found to increase with increasing Ge content, whereas the Hall mobility decreases for the same samples at all doping levels studied. The Hall factor decreases with increasing Ge content, which may be due to additional scattering mechanisms introduced by Ge along with changes in the valence band structure as a result of strain. In this study we also provide the first report of Hall mobility measurements of deuterium-passivated, heavily doped Si