High-power (AlGa)As strip-buried heterostructure lasers

Author

Van Der Ziel, Jan P. ; Logan, Ralph A. ; Dupuis, Russell D.

Author_Institution

AT&T Bell Laboratories, Murray Hill, NJ, USA

Volume

21

Issue

10

fYear

1985

fDate

10/1/1985 12:00:00 AM

Firstpage

1659

Lastpage

1665

Abstract

The characteristics of index-guided strip-buried heterostructure lasers are described. The lasers are grown by a two-step process, consisting of the initial 5-layer planar growth by MOCVD, and after etching to define the strip buried wave guide, recovery by Al0.65Ga0.35As using LPE. The devices are highly uniform, having 20 mA thresholds, quantum efficiencies of 0.65, and T0of 163°C. The TE polarized emission was in the lowest order transverse mode and consisted of ∼ 6 longitudinal modes. CW output powers of 50 mW per facet were obtained from lasers with reduced output reflectivity, and pulsed powers of 95 mW per facet from uncoated lasers have been obtained. The far-field angular widths were $\\sim 23\\deg$ and $\\sim 50\\deg$ in, and perpendicular to the junction plane, respectively. The total optical conversion efficiency of the coated laser emitting 50 mW CW was 41.5 percent.

Keywords

CW lasers; Gallium materials/lasers; Pulsed lasers; Etching; Laser modes; MOCVD; Optical pulses; Polarization; Power generation; Power lasers; Reflectivity; Strips; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1985.1072556

Filename

1072556