The characteristics of the lateral IGBT on the thin SOI film when the collector voltage of the IGBT is applied to the substrate

Author

Sumida, Hitoshi ; Hirabayashi, Atsuo ; Kumagai, Naoki

Author_Institution

Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

Volume

41

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1301

Lastpage

1302

Abstract

The characteristics of the lateral IGBT on an SOI film when the collector voltage of the IGBT is applied to the substrate are investigated for its application to a high side switch. The measurements of the blocking capability and the dynamic latch-up current during the turn-off transient under an inductive load are carried out with varying thicknesses of the SOI film. A 260 V IGBT can be fabricated on a 5 μm thick SOI film without the special device structure. The dynamic latch-up current is improved by reducing the SOI film thickness. This paper shows that applying the collector voltage of the IGBT to the substrate makes it possible to improve the characteristics of the IGBT on a thin SOI film

Keywords

insulated gate bipolar transistors; semiconductor switches; semiconductor-insulator boundaries; silicon; transients; 260 V; 5 micron; Si; blocking capability; collector voltage; dynamic latch-up current; high side switch; inductive load; lateral IGBT; thin SOI film; turn-off transient; Conductivity; Current measurement; Insulated gate bipolar transistors; Research and development; Semiconductor films; Silicon; Substrates; Switches; Thickness measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.293363

Filename

293363