DocumentCode
1103935
Title
Production technology for high-yield, high-performance GaAs monolithic amplifiers
Author
Wang, Shing-Kuo ; Chang, Ching-Der ; Siracusa, Mario ; Liu, Louis C T ; Pauley, Robert G. ; Asher, Peter ; Sokolich, Marko
Author_Institution
Hughes Aircraft Company, Torrance, CA
Volume
32
Issue
12
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
2766
Lastpage
2771
Abstract
A production technology for GaAs MMIC\´s has been developed. In a six-month period, seventy 2-in wafers have been processed for 
-band monolithic power and low-noise amplifiers and more than 2000 working chips have been produced. The two-stage power amplifiers have achieved a typical performance of 1.6-w output power with 8-dB associated gain and 20-percent power-added efficiency at 9.5 GHz. The two-stage low-noise amplifiers have consistently achieved 3-dB noise figure with 20-dB associated gain at the same frequency. Improvement of MMIC processing technology implemented in this work has resulted in-an average de chip yield of 15 percent.
-band monolithic power and low-noise amplifiers and more than 2000 working chips have been produced. The two-stage power amplifiers have achieved a typical performance of 1.6-w output power with 8-dB associated gain and 20-percent power-added efficiency at 9.5 GHz. The two-stage low-noise amplifiers have consistently achieved 3-dB noise figure with 20-dB associated gain at the same frequency. Improvement of MMIC processing technology implemented in this work has resulted in-an average de chip yield of 15 percent.Keywords
Capacitors; Circuit synthesis; Gallium arsenide; Low-noise amplifiers; Microwave FETs; Microwave devices; Millimeter wave integrated circuits; Power amplifiers; Power generation; Production;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22414
Filename
1485160
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