Title :
The Influences of Boundary Shapes on Polarization Characteristics and Lasing Modes in Broad-Area Vertical-Cavity Surface-Emitting Lasers With Cryogenic Detuning: Regular Versus Chaotic Cavities
Author :
Yan-Ting Yu ; Pi-Hui Tuan ; Po-Yi Chiang ; Kuan-Wei Su ; Kai-Feng Huang ; Yung-Fu Chen
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The broad-area rectangular-shaped and stadium-shaped VCSELs with nearly the same aspect ratio are designed to explore the influence of lateral boundary shapes on polarization states and lasing spectra with large detuning by cryogenic cooling. For the rectangular-shaped VCSEL, the lasing modes usually exhibit linearly polarized state and their far-field emissions mainly concentrate on four diagonal directions. On the other hand, the lasing modes of the stadium-shaped VCSEL generally display two orthogonally polarized states and their far-field emissions extensively spread on azimuthal directions. More intriguingly, the lasing spectra of the two devices clearly manifest the features of the energy-level distribution in regular and chaotic quantum billiards, respectively.
Keywords :
laser cavity resonators; laser modes; light polarisation; optical chaos; quantum optics; semiconductor lasers; surface emitting lasers; aspect ratio; azimuthal directions; broad-area rectangular-shaped VCSEL; broad-area vertical-cavity surface-emitting lasers; chaotic cavity; chaotic quantum billiards; cryogenic cooling; cryogenic detuning; diagonal directions; energy-level distribution; far-field emissions; lasing modes; lasing spectra; lateral boundary shapes; linearly polarized state; polarization characteristics; regular cavity; regular quantum billiards; stadium-shaped VCSEL; Cryogenics; Laser modes; Measurement by laser beam; Optical polarization; Vertical cavity surface emitting lasers; Semiconductor laser; laser stability; optical polarization; vertical-cavity surface-emitting lasers; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2414916