Laser oscillation at 3-4 µm optically pumped InAs1-x-ySbxPy

Author

Van Der Ziel, Jan P. ; Logan, Ralph A. ; Mikulyak, Robert M. ; Ballman, A.A.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

21

Issue

11

fYear

1985

fDate

11/1/1985 12:00:00 AM

Firstpage

1827

Lastpage

1832

Abstract

Quaternary InAs1-x-ySbxPy) and ternary InAs1-xSbxhave been grown on InAs substrates using liquid phase epitaxy. The quaternary layers are lattice matched to InAs for $y = 2.2x$ , and have bandgaps greater than InAs. The ternary layers have lower bandgaps than InAs, but have larger lattice constants. Reasonable quality growth has been obtained up to $x = 0.15$ where the luminescence peak is shifted to ∼4 from 3.1 μm and the lattice mismatch is ∼0.01. Optically pumped laser emission at 3.1 μm has been observed from 77 to 100 °K using an InAs active layer with InAs1-x-ySbxPyclading layers. Laser emission at 3.9 μm has been observed from 77 to 125 °K using a InAs1-xSbxactive layer, with $x\\sim 0.13$ , and InAs cladding layers. Laser emission from intermediate ternary compositions has also been observed.

Keywords

Epitaxial growth; Infrared lasers; Semiconductor lasers; Laser excitation; Lattices; Optical materials; Optical pumping; Optical refraction; Optical variables control; Photonic band gap; Pump lasers; Stimulated emission; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1985.1072573

Filename

1072573