DocumentCode :
1104245
Title :
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions
Author :
Campbell, J.C. ; Holden, W.S. ; Qua, G.J. ; Dentai, A.G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
21
Issue :
11
fYear :
1985
fDate :
11/1/1985 12:00:00 AM
Firstpage :
1743
Lastpage :
1746
Abstract :
We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, "grading," and multiplication regions (SAGM-APD\´s) for a wide range ( 
) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gain-bandwidth limit.
) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gain-bandwidth limit.Keywords :
Avalanche photodiodes; Absorption; Avalanche photodiodes; Bandwidth; Circuits; Frequency response; Indium gallium arsenide; Indium phosphide; Neodymium; Optical pulses; Pulse measurements;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072588
Filename :
1072588
Link To Document :
