DocumentCode
1104245
Title
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions
Author
Campbell, J.C. ; Holden, W.S. ; Qua, G.J. ; Dentai, A.G.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
21
Issue
11
fYear
1985
fDate
11/1/1985 12:00:00 AM
Firstpage
1743
Lastpage
1746
Abstract
We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, "grading," and multiplication regions (SAGM-APD\´s) for a wide range ( 
) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gain-bandwidth limit.
) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gain-bandwidth limit.Keywords
Avalanche photodiodes; Absorption; Avalanche photodiodes; Bandwidth; Circuits; Frequency response; Indium gallium arsenide; Indium phosphide; Neodymium; Optical pulses; Pulse measurements;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1985.1072588
Filename
1072588
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