DocumentCode
1104266
Title
High-power InGaAs/GaAs 1.3 μm VCSELS based on novel electrical confinement scheme
Author
Von Würtemberg, R. Marcks ; Berggren, J. ; Dainese, M. ; Hammar, M.
Author_Institution
R. Inst. of Technol. (KTH), Kista
Volume
44
Issue
6
fYear
2008
Firstpage
414
Lastpage
415
Abstract
Reported are 1.3 mum InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mum large devices.
Keywords
epitaxial growth; lithography; surface emitting lasers; InGaAs-GaAs; cavity region; differential efficiency; electrical confinement scheme; high power VCSEL; lithographic; selective area epitaxial regrowth; size 1.3 mum;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20080056
Filename
4472413
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