• DocumentCode
    1104276
  • Title

    Very low threshold current density 1.29 μm GaInNAs triple quantum well lasers grown by MBE

  • Author

    Zhao, H. ; Adolfsson, G. ; Wang, S.M. ; Sadeghi, M. ; Larsson, A.

  • Author_Institution
    Chalmers Univ. of Technol., Goteborg
  • Volume
    44
  • Issue
    6
  • fYear
    2008
  • Firstpage
    416
  • Lastpage
    417
  • Abstract
    Very low threshold Ga0.62In0.38N0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29 mum are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As- cleaved broad area lasers with a cavity length of 1 mm showed a record low threshold current density of 400 A/cm2 (~130 A/cm2 / QW), a high differential efficiency of 0.32 W/A/facet and a characteristic temperature of 94 K in the temperature range 10 to 110degC.
  • Keywords
    annealing; molecular beam epitaxial growth; quantum well lasers; GaInNAs-GaN-GaAs; in situ annealing; molecular beam epitaxy; temperature 10 C to 110 C; temperature 94 K; triple quantum well laser; wavelength 1.29 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080207
  • Filename
    4472414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104276