DocumentCode
1104291
Title
Influence of diffusion current on the DC and AC characteristics of the junction field-effect transistor
Author
Turchetti, C. ; Masetti, G.
Author_Institution
University of Ancona, Ancona, Italy
Volume
6
Issue
1
fYear
1985
fDate
1/1/1985 12:00:00 AM
Firstpage
57
Lastpage
59
Abstract
It is shown that, for all the operating regimes of a long-channel JFET, analytical expressions for the drain current and for its drift and diffusion components can be derived. Also, it is found that the output characteristics, the drain conductance, and the transconductances of the device naturally saturate with drain voltage, while the transfer characteristics exponentially decrease with gate voltage in sub-pinchoff.
Keywords
Analytical models; Charge carrier processes; Current density; Doping; Electron mobility; Electrostatics; FETs; MOSFET circuits; Neodymium; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26040
Filename
1485193
Link To Document