Title :
Influence of diffusion current on the DC and AC characteristics of the junction field-effect transistor
Author :
Turchetti, C. ; Masetti, G.
Author_Institution :
University of Ancona, Ancona, Italy
fDate :
1/1/1985 12:00:00 AM
Abstract :
It is shown that, for all the operating regimes of a long-channel JFET, analytical expressions for the drain current and for its drift and diffusion components can be derived. Also, it is found that the output characteristics, the drain conductance, and the transconductances of the device naturally saturate with drain voltage, while the transfer characteristics exponentially decrease with gate voltage in sub-pinchoff.
Keywords :
Analytical models; Charge carrier processes; Current density; Doping; Electron mobility; Electrostatics; FETs; MOSFET circuits; Neodymium; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26040