DocumentCode :
1104314
Title :
Comments on "Small geometry MOS transistor capacitance measurement method using simple on-chip circuits"
Author :
Yao, C.T. ; Lin, H.C.
Author_Institution :
Martin Marietta Laboratories, Baltimore, MD
Volume :
6
Issue :
1
fYear :
1985
fDate :
1/1/1985 12:00:00 AM
Firstpage :
63
Lastpage :
63
Abstract :
A careful study of the recent letter published in this journal by Oristian et al. [1] shows that their measurement arrangement cannot be used to measure the internodal capacitances of a MOSFET. Their measurement arrangement works only under their specified conditions which can be checked by the quasi-static CV method. However, their measurement arrangement cannot be extended to other conditions due to their fundamentally wrong assumption.
Keywords :
Capacitance measurement; Capacitors; Circuit testing; Geometry; Instruments; MOSFET circuits; Parasitic capacitance; Semiconductor device measurement; Voltage; Wiring;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26042
Filename :
1485195
Link To Document :
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