Title :
Comments on "Small geometry MOS transistor capacitance measurement method using simple on-chip circuits"
Author :
Yao, C.T. ; Lin, H.C.
Author_Institution :
Martin Marietta Laboratories, Baltimore, MD
fDate :
1/1/1985 12:00:00 AM
Abstract :
A careful study of the recent letter published in this journal by Oristian et al. [1] shows that their measurement arrangement cannot be used to measure the internodal capacitances of a MOSFET. Their measurement arrangement works only under their specified conditions which can be checked by the quasi-static CV method. However, their measurement arrangement cannot be extended to other conditions due to their fundamentally wrong assumption.
Keywords :
Capacitance measurement; Capacitors; Circuit testing; Geometry; Instruments; MOSFET circuits; Parasitic capacitance; Semiconductor device measurement; Voltage; Wiring;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26042