Analysis of insulated gate transistor turn-off characteristics

A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good quantitative explanation of the shape of the collector current waveform during turn-off. Verification was accomplished using insulated gate transistors (IGT´s) fabricated with two voltage ratings and a variety of radiation doses. This analysis allows the separation of the channel (electron) and minority carrier (hole) current flow in the IGT for the first time.