• DocumentCode
    1104372
  • Title

    High conversion efficiency p-n+InP homojunction solar cells

  • Author

    Shen, C.C. ; Choi, K.Y.

  • Author_Institution
    Arizona State University, Tempe, AZ
  • Volume
    6
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    78
  • Lastpage
    80
  • Abstract
    p-n+InP homojunction solar cells have been fabricated and investigated. The best experimental cell without an antireflection coating exhibits a conversion efficiency of 13.5 percent (active area) under AM1 illumination; the corresponding open-circuit voltage, short-circuit current density, and fill factor (F.F.) are 0.817 V, 21.0 mA/cm2, and 0.787, respectively.
  • Keywords
    Annealing; Coatings; Epitaxial layers; Indium phosphide; Lighting; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26049
  • Filename
    1485202
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104372