DocumentCode :
1104372
Title :
High conversion efficiency p-n+InP homojunction solar cells
Author :
Shen, C.C. ; Choi, K.Y.
Author_Institution :
Arizona State University, Tempe, AZ
Volume :
6
Issue :
2
fYear :
1985
fDate :
2/1/1985 12:00:00 AM
Firstpage :
78
Lastpage :
80
Abstract :
p-n+InP homojunction solar cells have been fabricated and investigated. The best experimental cell without an antireflection coating exhibits a conversion efficiency of 13.5 percent (active area) under AM1 illumination; the corresponding open-circuit voltage, short-circuit current density, and fill factor (F.F.) are 0.817 V, 21.0 mA/cm2, and 0.787, respectively.
Keywords :
Annealing; Coatings; Epitaxial layers; Indium phosphide; Lighting; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Zinc;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1985.26049
Filename :
1485202
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1104372
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