• DocumentCode
    110441
  • Title

    The Effect of Tensile Strain on Optical Anisotropy and Exciton of m -Plane ZnO

  • Author

    Wang, H.H. ; Tian, J.S. ; Chen, C.Y. ; Huang, H.H. ; Yeh, Y.C. ; Deng, P.Y. ; Chang, L. ; Chu, Y.H. ; Wu, Y.R. ; He, J.H.

  • Author_Institution
    Comput., Electr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
  • Volume
    7
  • Issue
    2
  • fYear
    2015
  • fDate
    Apr-15
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
  • Keywords
    II-VI semiconductors; light polarisation; optical films; optical materials; piezo-optical effects; thermo-optical effects; wide band gap semiconductors; zinc compounds; LaAlO3; ZnO-LaAlO3; exciton; m-plane ZnO film; near band edge emission; optical anisotropy; polarization degree; temperature dependency; tensile strain; Anisotropic magnetoresistance; Geometrical optics; Optical films; Optical polarization; Strain; Zinc oxide; II-VI semiconductor materials; Optical films; optical polarization; photoluminescence; strain;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2015.2415672
  • Filename
    7064700