DocumentCode :
110441
Title :
The Effect of Tensile Strain on Optical Anisotropy and Exciton of 
-Plane ZnO
Author :
Wang, H.H. ; Tian, J.S. ; Chen, C.Y. ; Huang, H.H. ; Yeh, Y.C. ; Deng, P.Y. ; Chang, L. ; Chu, Y.H. ; Wu, Y.R. ; He, J.H.
Author_Institution :
Comput., Electr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Volume :
7
Issue :
2
fYear :
2015
fDate :
Apr-15
Firstpage :
1
Lastpage :
8
Abstract :
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
Keywords :
II-VI semiconductors; light polarisation; optical films; optical materials; piezo-optical effects; thermo-optical effects; wide band gap semiconductors; zinc compounds; LaAlO3; ZnO-LaAlO3; exciton; m-plane ZnO film; near band edge emission; optical anisotropy; polarization degree; temperature dependency; tensile strain; Anisotropic magnetoresistance; Geometrical optics; Optical films; Optical polarization; Strain; Zinc oxide; II-VI semiconductor materials; Optical films; optical polarization; photoluminescence; strain;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2015.2415672
Filename :
7064700
Link To Document :
