High efficient silicon phase modulator based on n-p-n configuration

A Mach-Zehnder modulator based on n-p-n electronic configuration and a single mode waveguide is proposed and analysed. The excellent optical confinement together with the reversed biased operation enables high efficiency and fast modulation. An optimum overlap between the optical field and the depletion regions warrants a V_piL_pi merit of 0.87 V ldr cm. The rise and fall times are 0.063 and 0.006 ns, respectively, when conventional electrodes are utilised.