DocumentCode :
1104449
Title :
Auger effect in GaSb quantum well lasers
Author :
Sugimura, Akira ; Patzak, Erwin ; Meissner, Peter
Author_Institution :
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
21
Issue :
12
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
1851
Lastpage :
1853
Abstract :
The Auger recombination effect in GaSb quantum well lasers is discussed. A formula for the calculation of the CHSH Auger rate in quantum well structures is presented, which can be applied to the material where the bandgap is almost the same as the split-off gap. Using this formula, the quantum efficiency of the GaSb quantum well laser is calculated and compared to those of conventional double heterostructure lasers. It is found that the quantum efficiency of the GaSb quantum well laser can be improved to values higher than 50 percent in the wavelength range of 
m.
m.Keywords :
Gallium materials/lasers; DH-HEMTs; Gallium arsenide; Gas lasers; Helium; Laser theory; Optical materials; Particle scattering; Quantum well lasers; Radiative recombination; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1985.1072604
Filename :
1072604
Link To Document :
