DocumentCode
1104457
Title
Use of a surrounding p-type ring to decrease backgate biasing in GaAs MESFET´s
Author
Blum, A.S. ; Flesner, L.D.
Author_Institution
University of California, Livermore, CA
Volume
6
Issue
2
fYear
1985
fDate
2/1/1985 12:00:00 AM
Firstpage
97
Lastpage
99
Abstract
The sensitivity to backgate biasing of two MESFET designs, one with an implanted surrounding p-ring and one without, were compared. A highly resistive p-like surface layer, possibly arising from the uncapped anneal, is thought to be the agent of the backgating. The addition of the surrounding p-ring results in greatly decreased backgate biasing.
Keywords
Annealing; Electrodes; Gallium arsenide; Implants; Laboratories; MESFETs; Protection; Sea surface; Surface resistance; Testing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1985.26056
Filename
1485209
Link To Document