• DocumentCode
    1104467
  • Title

    Accurate trigger condition analysis for CMOS latchup

  • Author

    Pinto, M.R. ; Dutton, R.W.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    6
  • Issue
    2
  • fYear
    1985
  • fDate
    2/1/1985 12:00:00 AM
  • Firstpage
    100
  • Lastpage
    102
  • Abstract
    Two-dimensional device simulation is used to accurately predict both static and dynamic triggering conditions for CMOS latchup. Excellent agreement is obtained with experimental results for static trigger currents that cannot be modeled using lumped element approaches. For the first time, full transient two-dimensional simulation is performed to obtain a dynamic triggering threshold.
  • Keywords
    Anodes; Bipolar transistors; Circuit analysis; Circuit simulation; Current measurement; Parameter estimation; Predictive models; Semiconductor device modeling; Vehicle dynamics; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26057
  • Filename
    1485210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104467