Title :
Readout drain current dependence of programming window in nanocrystal memory cells
Author :
Wrachien, N. ; Autizi, E. ; Cester, A. ; Portoghese, R. ; Gerardi, C.
Author_Institution :
Padova Univ., Padova
Abstract :
The different behaviour of nanocrystal memory cells in linear and subthreshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conventional floating gate memories.
Keywords :
memory architecture; nanoelectronics; readout electronics; discrete nanodots; nanocrystal memory cells; programming window; readout drain current dependence; subthreshold region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083558
