• DocumentCode
    1104481
  • Title

    Readout drain current dependence of programming window in nanocrystal memory cells

  • Author

    Wrachien, N. ; Autizi, E. ; Cester, A. ; Portoghese, R. ; Gerardi, C.

  • Author_Institution
    Padova Univ., Padova
  • Volume
    44
  • Issue
    6
  • fYear
    2008
  • Firstpage
    445
  • Lastpage
    446
  • Abstract
    The different behaviour of nanocrystal memory cells in linear and subthreshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conventional floating gate memories.
  • Keywords
    memory architecture; nanoelectronics; readout electronics; discrete nanodots; nanocrystal memory cells; programming window; readout drain current dependence; subthreshold region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20083558
  • Filename
    4472433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104481