Nonstatic effects in the GaAs permeable base transistor

Nonstatic transport effects in the permeable base transistor (PBT) are included in a two-dimensional multiparticle Monte Carlo (MC) analysis. This approach predicts charge depletion between the gate electrodes as VGSis increased over 0.5 V, as opposed to the accumulation of a net negative space charge predicted by the conventional static mobility model. More than a 60-percent increase in unity-current gain-frequency fT, of the PBT was predicted compared with the conventional result.