• DocumentCode
    1104556
  • Title

    Velocity saturation effect on short-channel MOS transistor capacitance

  • Author

    Iwai, H. ; Pinto, M.R. ; Rafferty, C.S. ; Oristian, J.E. ; Dutton, R.W.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    120
  • Lastpage
    122
  • Abstract
    To analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree quite well. Several causes of short-channel effects are explained by the simulations. Velocity saturation effects are found to play a key role in the gradual increase in Cgd. Also holes in the accumulation region and the two-dimensional effect or the influence of the back-gate field from the drain are important in explaining the short-channel effect of MOS transistor capacitance.
  • Keywords
    Analytical models; Capacitance; Circuit simulation; Electrodes; Geometry; Laboratories; MOSFETs; Solid modeling; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26066
  • Filename
    1485219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104556