DocumentCode :
110456
Title :
An Effective Thermal Model for FinFET Structure
Author :
Ming-Cheng Cheng ; Smith, Jeffrey A. ; Wangkun Jia ; Coleman, Ron
Author_Institution :
Clarkson Univ., Potsdam, NY, USA
Volume :
61
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
202
Lastpage :
206
Abstract :
This brief presents a physics-based thermal model for FinFET structure that is constructed mainly based on the concept of characteristic thermal lengths representing various heat loss paths for heat conduction along each segment of the fins, channel, and metal/poly wires. The model is calibrated by extracting the thermal resistances and thermal lengths describing the heat conduction and losses in each segment and extended to multifin structure to account for thermal coupling between fins. The accuracy of the model is demonstrated against 3-D numerical simulations.
Keywords :
MOSFET; heat losses; thermal management (packaging); thermal resistance; wires (electric); 3D numerical simulations; FinFET structure; channel; heat conduction; heat loss paths; heat losses; metal/poly wires; multifin structure; physics-based thermal model; thermal coupling; thermal lengths; thermal resistances; FinFETs; Heating; Integrated circuit modeling; Logic gates; Metals; Thermal resistance; Wires; FinFET; thermal length; thermal model/circuit;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2291512
Filename :
6675039
Link To Document :
بازگشت