• DocumentCode
    110456
  • Title

    An Effective Thermal Model for FinFET Structure

  • Author

    Ming-Cheng Cheng ; Smith, Jeffrey A. ; Wangkun Jia ; Coleman, Ron

  • Author_Institution
    Clarkson Univ., Potsdam, NY, USA
  • Volume
    61
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    202
  • Lastpage
    206
  • Abstract
    This brief presents a physics-based thermal model for FinFET structure that is constructed mainly based on the concept of characteristic thermal lengths representing various heat loss paths for heat conduction along each segment of the fins, channel, and metal/poly wires. The model is calibrated by extracting the thermal resistances and thermal lengths describing the heat conduction and losses in each segment and extended to multifin structure to account for thermal coupling between fins. The accuracy of the model is demonstrated against 3-D numerical simulations.
  • Keywords
    MOSFET; heat losses; thermal management (packaging); thermal resistance; wires (electric); 3D numerical simulations; FinFET structure; channel; heat conduction; heat loss paths; heat losses; metal/poly wires; multifin structure; physics-based thermal model; thermal coupling; thermal lengths; thermal resistances; FinFETs; Heating; Integrated circuit modeling; Logic gates; Metals; Thermal resistance; Wires; FinFET; thermal length; thermal model/circuit;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2291512
  • Filename
    6675039