Conductance Along the Interface Formed by 400 °C Pure Boron Deposition on Silicon

Author

Lin Qi ; Nanver, Lis K.

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

102

Lastpage

104

Abstract

The conductance along the interface between an as-deposited pure boron layer and n-type Si, fabricated at 400 °C, is found to be reliably formed with high-ohmic sheet resistance values going from ~30 kΩ/sq to 1 MΩ/sq, depending on the exact substrate doping and biasing. The temperature coefficient is negative. It is proposed that this behavior is due to an interface monolayer of electron-filled acceptor states attracting an inversion layer of holes that provide ideal p⁺n junction behavior and lateral carrier transport unperturbed by interface defects.

Keywords

boron; chemical vapour deposition; electric admittance; elemental semiconductors; interface states; monolayers; p-n junctions; silicon; B-Si; as-deposited pure boron layer; conductance; electron-filled acceptor states; exact substrate doping; high-ohmic sheet resistance; hole inversion layer; ideal p⁺n junction behavior; interface defects; interface monolayer; lateral carrier transport; n-type silicon; temperature 400 degC; temperature coefficient; Doping; Electrical resistance measurement; Resistance; Resistors; Silicon; Substrates; Temperature measurement; Boron chemical-vapor deposition; boron chemical-vapor deposition; high-ohmic resistors; interface conductance; junction diodes; sheet resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2386296

Filename

6998818