Title :
High-Speed (400 Gb/s) Eight-Channel EADFB Laser Array Module Using Flip-Chip Interconnection Technique
Author :
Kanazawa, Shigeru ; Fujisawa, Takeshi ; Ishii, Hiroyuki ; Takahata, Kiyoto ; Ueda, Yuta ; Iga, Ryuzo ; Sanjoh, Hiroaki
Author_Institution :
NTT Device Innovation Center, NTT Corp., Atsugi, Japan
Abstract :
We fabricated a 400-G flip-chip interconnection eight-channel EADFB laser array module. The flip-chip interconnection technique provides a higher modulation bandwidth and lower electrical crosstalk than the wire interconnection technique. The 3-dB bandwidth of the flip-chip interconnection subassembly was about 50 GHz. And the electrical crosstalk of the flip-chip interconnection module was suppressed to less than -20 dB below 35 GHz. We obtained clear eye openings for all eight lanes under eight-channel 50-Gb/s simultaneous operation after a 10-km SMF transmission.
Keywords :
distributed feedback lasers; electro-optical modulation; electroabsorption; flip-chip devices; integrated optoelectronics; optical communication equipment; optical crosstalk; optical fabrication; optical fibre communication; optical interconnections; quantum well lasers; semiconductor laser arrays; SMF transmission; bit rate 400 Gbit/s; bit rate 50 Gbit/s; electrical crosstalk; flip-chip interconnection eight-channel EADFB laser array module; flip-chip interconnection subassembly; high-speed eight-channel EADFB laser array module; modulation bandwidth; Arrays; Crosstalk; Flip-chip devices; Integrated circuit interconnections; Lasers; Modulation; Wires; 400 Gigabit Ethernet; 400 gigabit ethernet; Distributed feedback laser; EADFB laser array; Electro-absorption modulator; InGaAlAs; Photonic integrated circuits; electro-absorption modulator; photonic integrated circuits;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2415197