Title :
Optical and electrical current gain in an amorphous silicon bulk barrier phototransistor
Author :
Chang, C.Y. ; Wu, B.S. ; Fang, Y.K. ; Lee, R.H.
Author_Institution :
National Cheng Kung University, Tainan, Taiwan
fDate :
3/1/1985 12:00:00 AM
Abstract :
An amorphous silicon (a-Si) bulk barrier phototransistor was successfully fabricated on a glass substrate. The measured optical gain G and electrical current gain HFEare 196 percent and 11.8, respectively. Estimation and measurement methods for G and HFEare discussed.
Keywords :
Amorphous silicon; Current measurement; Electric variables measurement; Gain measurement; Glass; Hydrogen; Optical device fabrication; Optical materials; Phototransistors; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26076
