• DocumentCode
    1104660
  • Title

    Optical and electrical current gain in an amorphous silicon bulk barrier phototransistor

  • Author

    Chang, C.Y. ; Wu, B.S. ; Fang, Y.K. ; Lee, R.H.

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan
  • Volume
    6
  • Issue
    3
  • fYear
    1985
  • fDate
    3/1/1985 12:00:00 AM
  • Firstpage
    149
  • Lastpage
    150
  • Abstract
    An amorphous silicon (a-Si) bulk barrier phototransistor was successfully fabricated on a glass substrate. The measured optical gain G and electrical current gain HFEare 196 percent and 11.8, respectively. Estimation and measurement methods for G and HFEare discussed.
  • Keywords
    Amorphous silicon; Current measurement; Electric variables measurement; Gain measurement; Glass; Hydrogen; Optical device fabrication; Optical materials; Phototransistors; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1985.26076
  • Filename
    1485229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1104660