Title :
Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors
Author :
Chow, T.P. ; Baliga, B.J.
Author_Institution :
General Electric Company, Schenectady, NY
fDate :
4/1/1985 12:00:00 AM
Abstract :
The performance of insulated gate transistors with 300-, 600-, and 1200-V ratings were experimentally investigated. A comparison of several device characteristics, such as forward conduction, forward drop versus turn-off time tradeoff, and the dependence of turn-off time and leakage current upon electron irradiation dosage, is provided.
Keywords :
Bipolar transistors; Conductivity; Current density; Doping; Electrons; Insulation; Leakage current; MOSFET circuits; Power MOSFET; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1985.26082
